英语翻译1.IntroductionThe IGBT has become the mainly used power semiconductor device in modern power converter circuits in medium and high voltage applications.Even if these modules are designed to operate at relatively low frequency,typically <

英语翻译1.IntroductionThe IGBT has become the mainly used power semiconductor device in modern power converter circuits in medium and high voltage applications.Even if these modules are designed to operate at relatively low frequency,typically <
英语翻译
1.Introduction
The IGBT has become the mainly used power semiconductor device in modern power converter circuits in medium and high voltage applications.Even if these modules are designed to operate at relatively low frequency,typically < 5kHz,they produce high frequency oscillations which turn out from the interaction between the device,the driver and the converter circuit.These oscillations are recognized to be the main cause of EMI (Electro Magnetic Interference) emission and,in some circumstances,have been recognized to cause a significant reduction of the converter reliability [1].They can be mainly attributed to the IGBT internal capacitances and inductances stray elements [2] that,suitably stimulated,can resonate both internally to the module and with the external circuit [3,4].In particular it was found that the main stimulus to the electromagnetic noise emission is attributed to the voltage gradients [3].
In addition to these problems it was found [5] that IGBT devices can exhibit a significant voltage amplification at high frequency so that the problems of the oscillations can be further enhanced and because of this amplification the RF oscillations can become selfsustaining thus further reducing the reliability of the apparatus.Methods for minimizing RF oscillations of IGBT were presented in literature based on a careful design of PCB layout and gate driver [6].Moreover,the IGBT radio frequency amplification phenomena,can become relevant if the driver circuit generates high frequency conducted noise components,that can be transferred to the final stage and amplified,generating very high EMI levels.
In order to predict and reduce the EMI in power converter,it is very important to analyse the noise oscillations under different electrical IGBT module conditions that can be experienced during the normal device operations.For this reasons a model for high frequency behaviour of IGBT modules was presented [3],which however is not able to include their amplification effect.This effect was found to play a major role in causing electrical instabilities of the current sharing among the chips of the module [2].In this latter paper a small signal circuit model of IGBT devices was presented for single chip IGBTs.Data on analysis of single chips IGBT devices are also reported in [5].
The objective of this paper is to present an experimental study about the high frequency amplification observed in high voltage high current IGBT module as a function of the driving and power parameters.An original experimental set-up was constructed for studying the small signal behaviour of these modules in a single device commutation in order to reduce the power dissipation on the device.The experimental characterisation is intended to point out a complete high frequency low signal model of high power IGBT modules that includes the RF voltage amplification effects.

英语翻译1.IntroductionThe IGBT has become the mainly used power semiconductor device in modern power converter circuits in medium and high voltage applications.Even if these modules are designed to operate at relatively low frequency,typically <
简介
IGBT模块已被广泛运用作中高电压整流器电路中的电力半导体设备.
即使这类模块被设计成低频率运作,典型的如<5kHz,其与传动器（如是其他含义请联系文章上下文）和整流电路的交感作用仍然能够产生高频振荡 .
经过验证,这些振荡是产生EMI(电磁振荡)喷射的主要原因,在特定环境下,将大幅度降低整流器的可靠性.这是由于IGBT内部存在电容和电感的离群分子[2] 在适当刺激下可以与内接模块和外接电路产生共振【3,4】.
电压梯度是造成电磁噪音喷射的主要因素.
除了上述问题之外,IGBT设备展现出的高频率下的电压放大效应进加剧了电路振荡问题,因此而产生的具备自持振荡特性的RF振荡进一步降低了设备的可靠性.
通过仔细设计pcb布局图和门驱动器降低IGBT的RF振荡的方法在文献中已有介绍.此外,如果驱动电路产生的高频传导噪音被放大传递到末级,相应的IGBT射频放大现象可以产生更高的EMI.
为了预测和减少整流器的EMI,分析常规操作中不同电流条件下IGBT模块的噪音振荡是十分重要的.
因此,这里介绍（不同）了IGBT模块在高频下的（演示）模型【3】,然而,（此模型）无法显示其放大效应.
这个效应被视为引起模块间共享电流不稳定的主要原因.
在这篇论文的后面部分介绍了一个用于单芯IGBTs的IGBT设备的微信号电路模型.单芯IGBT设备的分析数据在【5】中也有报告.
这篇实验论文的目的是研究高电压高电流条件下从IGBT模块观察到的高频放大现象的与驱动和功率系数的关联性.
为了减少功率消耗,使用初始试验设置研究这些模块在单一设备交换中的微信号表现.
此实验的特点在于指出了一个完整的包含了RF电压放大效应的高功率IGBT模块的高频率低信号模型.
---大概就是这样,有些名词可能不太准确,楼主再参详参详.---